N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STMicroelectronics STB100N6F7
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Width
9.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.6mm
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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€ 12,25
€ 2,45 Each (In a Pack of 5) (bez PDV-a)
€ 14,33
€ 2,866 Each (In a Pack of 5) (s PDV-om)
Standard
5
€ 12,25
€ 2,45 Each (In a Pack of 5) (bez PDV-a)
€ 14,33
€ 2,866 Each (In a Pack of 5) (s PDV-om)
Standard
5
Kupujte na veliko
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 5 - 5 | € 2,45 | € 12,25 |
| 10 - 95 | € 2,10 | € 10,50 |
| 100 - 495 | € 1,64 | € 8,20 |
| 500+ | € 1,44 | € 7,20 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Width
9.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.6mm
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda