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STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
83 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
855pF
Maximum Operating Temperature
+175 °C
Energy Rating
221mJ
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 1,32
Each (Supplied on a Reel) (bez PDV-a)
€ 1,65
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
10
€ 1,32
Each (Supplied on a Reel) (bez PDV-a)
€ 1,65
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
10
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
10 - 40 | € 1,32 | € 13,20 |
50 - 90 | € 1,27 | € 12,70 |
100 - 240 | € 1,19 | € 11,90 |
250 - 490 | € 1,12 | € 11,20 |
500+ | € 1,11 | € 11,10 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
83 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
855pF
Maximum Operating Temperature
+175 °C
Energy Rating
221mJ
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.