Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Height
0.8mm
Zemlja podrijetla
Japan
Detalji o proizvodu
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,24
komadno (u pakiranju od 30) (bez PDV-a)
€ 0,30
komadno (u pakiranju od 30) (s PDV-om)
30
€ 0,24
komadno (u pakiranju od 30) (bez PDV-a)
€ 0,30
komadno (u pakiranju od 30) (s PDV-om)
30
Kupujte na veliko
količina | jedinična cijena | Po pakiranje |
---|---|---|
30 - 120 | € 0,24 | € 7,20 |
150+ | € 0,23 | € 6,90 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Height
0.8mm
Zemlja podrijetla
Japan
Detalji o proizvodu