Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
210 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.7mm

Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
Standard
1
P.O.A.
Standard
1

Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
210 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.7mm
