Tehnička dokumentacija
Tehnički podaci
Proizvođač
ams OSRAMSpectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
8µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
150 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
3mm (T-1)
Dimensions
4 x 4 x 3.1mm
Collector Current
20mA
Maximum Wavelength Detected
940nm
Spectral Range of Sensitivity
350 → 940 nm
Minimum Wavelength Detected
350nm
Length
4mm
Width
4mm
Height
3.1mm
Detalji o proizvodu
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Ambient Light Sensors, OSRAM Opto Semiconductors
€ 26,60
€ 1,33 Each (Supplied as a Tape) (bez PDV-a)
€ 33,25
€ 1,662 Each (Supplied as a Tape) (s PDV-om)
Proizvodno pakiranje (traka)
20
€ 26,60
€ 1,33 Each (Supplied as a Tape) (bez PDV-a)
€ 33,25
€ 1,662 Each (Supplied as a Tape) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (traka)
20
Informacije o stanju skladišta trenutno nisu dostupne.
količina | jedinična cijena | Po traka |
---|---|---|
20 - 95 | € 1,33 | € 6,65 |
100 - 495 | € 0,97 | € 4,85 |
500 - 995 | € 0,76 | € 3,80 |
1000+ | € 0,66 | € 3,30 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ams OSRAMSpectrums Detected
Infrared, Ultraviolet, Visible Light
Number of Channels
1
Maximum Light Current
8µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
150 °
Polarity
NPN
Number of Pins
2
Mounting Type
Through Hole
Package Type
3mm (T-1)
Dimensions
4 x 4 x 3.1mm
Collector Current
20mA
Maximum Wavelength Detected
940nm
Spectral Range of Sensitivity
350 → 940 nm
Minimum Wavelength Detected
350nm
Length
4mm
Width
4mm
Height
3.1mm
Detalji o proizvodu
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.