Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexMounting Type
Surface Mount
Package Type
SOD-123
Maximum Continuous Forward Current
500mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
430mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
5.5A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 10,00
€ 0,10 Each (Supplied as a Tape) (bez PDV-a)
€ 12,50
€ 0,125 Each (Supplied as a Tape) (s PDV-om)
Standard
100
€ 10,00
€ 0,10 Each (Supplied as a Tape) (bez PDV-a)
€ 12,50
€ 0,125 Each (Supplied as a Tape) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
100
Informacije o stanju skladišta trenutno nisu dostupne.
količina | jedinična cijena | Po traka |
---|---|---|
100 - 500 | € 0,10 | € 10,00 |
600 - 1400 | € 0,09 | € 9,00 |
1500+ | € 0,08 | € 8,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexMounting Type
Surface Mount
Package Type
SOD-123
Maximum Continuous Forward Current
500mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
430mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
5.5A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.