Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
RSD 1.045
RSD 10,451 komad (u Reel od 100) (bez PDV-a)
RSD 1.254
RSD 12,541 komad (u Reel od 100) (s PDV-om)
Standard
100
RSD 1.045
RSD 10,451 komad (u Reel od 100) (bez PDV-a)
RSD 1.254
RSD 12,541 komad (u Reel od 100) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
100
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cena | Po kolut |
---|---|---|
100 - 100 | RSD 10,451 | RSD 1.045 |
200 - 900 | RSD 9,144 | RSD 914 |
1000+ | RSD 5,225 | RSD 523 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu