Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
KM 41,07
KM 1,369 Each (In a Pack of 30) (bez PDV-a)
KM 48,05
KM 1,602 Each (In a Pack of 30) (s PDV-om)
Standard
30
KM 41,07
KM 1,369 Each (In a Pack of 30) (bez PDV-a)
KM 48,05
KM 1,602 Each (In a Pack of 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
30
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
30 - 30 | KM 1,369 | KM 41,07 |
60 - 120 | KM 1,33 | KM 39,90 |
150 - 270 | KM 0,88 | KM 26,40 |
300 - 570 | KM 0,704 | KM 21,12 |
600+ | KM 0,567 | KM 17,02 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu