Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-23
Maximum Continuous Forward Current
70mA
Peak Reverse Repetitive Voltage
70V
Diode Configuration
Common Anode
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
1V
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
100mA
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
RSD 914
RSD 36,578 komad ( isporučivo na traci) (bez PDV-a)
RSD 1.097
RSD 43,894 komad ( isporučivo na traci) (s PDV-om)
Standard
25
RSD 914
RSD 36,578 komad ( isporučivo na traci) (bez PDV-a)
RSD 1.097
RSD 43,894 komad ( isporučivo na traci) (s PDV-om)
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po traka |
---|---|---|
25 - 225 | RSD 36,578 | RSD 914 |
250+ | RSD 13,063 | RSD 327 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-23
Maximum Continuous Forward Current
70mA
Peak Reverse Repetitive Voltage
70V
Diode Configuration
Common Anode
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
1V
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
100mA
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.