Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.2mm
Typical Gate Charge @ Vgs
21.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Detalji o proizvodu
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 124,00
€ 0,62 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 145,08
€ 0,725 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
200
€ 124,00
€ 0,62 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 145,08
€ 0,725 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
200
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po kolut |
---|---|---|
200 - 480 | € 0,62 | € 12,40 |
500 - 1980 | € 0,57 | € 11,40 |
2000+ | € 0,52 | € 10,40 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.2mm
Typical Gate Charge @ Vgs
21.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Detalji o proizvodu