Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
113 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
KM 19,56
KM 0,196 Each (In a Pack of 100) (bez PDV-a)
KM 22,88
KM 0,229 Each (In a Pack of 100) (s PDV-om)
Standard
100
KM 19,56
KM 0,196 Each (In a Pack of 100) (bez PDV-a)
KM 22,88
KM 0,229 Each (In a Pack of 100) (s PDV-om)
Standard
100
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
100 - 1400 | KM 0,196 | KM 19,56 |
1500+ | KM 0,156 | KM 15,65 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
113 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu