Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
RSD 1.241
RSD 124,103 komadno (u pakovanju od 10) (bez PDV-a)
RSD 1.489
RSD 148,924 komadno (u pakovanju od 10) (s PDV-om)
Standard
10
RSD 1.241
RSD 124,103 komadno (u pakovanju od 10) (bez PDV-a)
RSD 1.489
RSD 148,924 komadno (u pakovanju od 10) (s PDV-om)
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
10 - 30 | RSD 124,103 | RSD 1.241 |
40 - 190 | RSD 113,652 | RSD 1.137 |
200 - 990 | RSD 105,814 | RSD 1.058 |
1000 - 1990 | RSD 95,363 | RSD 954 |
2000+ | RSD 84,913 | RSD 849 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu