Infineon BFP640ESDH6327XTSA1 NPN RF Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
4.1 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
4.8 V
Maximum Emitter Base Voltage
0.5 V
Maximum Operating Frequency
45 GHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.9mm
Detalji o proizvodu
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
RSD 2.482
RSD 99,283 komadno (u pakovanju od 25) (bez PDV-a)
RSD 2.978
RSD 119,14 komadno (u pakovanju od 25) (s PDV-om)
Standard
25
RSD 2.482
RSD 99,283 komadno (u pakovanju od 25) (bez PDV-a)
RSD 2.978
RSD 119,14 komadno (u pakovanju od 25) (s PDV-om)
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 25 - 225 | RSD 99,283 | RSD 2.482 |
| 250 - 600 | RSD 75,768 | RSD 1.894 |
| 625 - 1225 | RSD 73,156 | RSD 1.829 |
| 1250 - 2475 | RSD 71,849 | RSD 1.796 |
| 2500+ | RSD 67,93 | RSD 1.698 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
4.1 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
4.8 V
Maximum Emitter Base Voltage
0.5 V
Maximum Operating Frequency
45 GHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.9mm
Detalji o proizvodu
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda