Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Series
CoolSiC 2000 V SiC Trench MOSFET
Package Type
PG-TO247-4-PLUS-NT14
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Zemlja podrijetla
Malaysia
KM 2.816,35
KM 281,64 Each (Supplied in a Tube) (bez PDV-a)
KM 3.295,13
KM 329,52 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakovanje (cijev)
10
KM 2.816,35
KM 281,64 Each (Supplied in a Tube) (bez PDV-a)
KM 3.295,13
KM 329,52 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakovanje (cijev)
10
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Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Series
CoolSiC 2000 V SiC Trench MOSFET
Package Type
PG-TO247-4-PLUS-NT14
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Zemlja podrijetla
Malaysia