Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0082 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Transistor Material
Si
RSD 3.253
RSD 216,854 komadno (u pakovanju od 15) (bez PDV-a)
RSD 3.903
RSD 260,225 komadno (u pakovanju od 15) (s PDV-om)
Standard
15
RSD 3.253
RSD 216,854 komadno (u pakovanju od 15) (bez PDV-a)
RSD 3.903
RSD 260,225 komadno (u pakovanju od 15) (s PDV-om)
Standard
15
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
15 - 60 | RSD 216,854 | RSD 3.253 |
75 - 135 | RSD 209,016 | RSD 3.135 |
150+ | RSD 195,952 | RSD 2.939 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0082 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Transistor Material
Si