Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31.2 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.11 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon
KM 40,68
KM 20,34 Each (In a Pack of 2) (bez PDV-a)
KM 47,60
KM 23,798 Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 40,68
KM 20,34 Each (In a Pack of 2) (bez PDV-a)
KM 47,60
KM 23,798 Each (In a Pack of 2) (s PDV-om)
Standard
2
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 8 | KM 20,34 | KM 40,68 |
10 - 18 | KM 18,15 | KM 36,30 |
20 - 48 | KM 17,622 | KM 35,24 |
50 - 98 | KM 17,211 | KM 34,42 |
100+ | KM 16,487 | KM 32,97 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31.2 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.11 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon