Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB IRLB3034PBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
343 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
108 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.02mm
Zemlja podrijetla
Mexico
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 22.535
RSD 450,69 komad (u Tubi od 50) (bez PDV-a)
RSD 27.041
RSD 540,828 komad (u Tubi od 50) (s PDV-om)
50
RSD 22.535
RSD 450,69 komad (u Tubi od 50) (bez PDV-a)
RSD 27.041
RSD 540,828 komad (u Tubi od 50) (s PDV-om)
50
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
| količina | Jedinična cena | Po cev |
|---|---|---|
| 50 - 50 | RSD 450,69 | RSD 22.535 |
| 100 - 200 | RSD 371,003 | RSD 18.550 |
| 250+ | RSD 357,94 | RSD 17.897 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
343 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
108 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.02mm
Zemlja podrijetla
Mexico
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda