Infineon HEXFET N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 IRLML6344TRPBF

RS kataloški broj:: 913-4073robna marka: InfineonProizvođački broj:: IRLML6344TRPBF
brand-logo
Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

6.8 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Height

1.02mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Philippines

Detalji o proizvodu

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
Informacije o stanju skladišta trenutno nisu dostupne.

KM 938,78

KM 0,313 Each (On a Reel of 3000) (bez PDV-a)

KM 1.098,37

KM 0,366 Each (On a Reel of 3000) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 IRLML6344TRPBF

3000

Dostupno u više komada 3000
3000KM 938,78
6000KM 1.877,57
9000KM 2.640,33
12000KM 3.520,44
15000KM 4.400,55
18000KM 5.280,66
21000KM 6.160,77
24000KM 7.040,88
27000KM 7.920,99
30000KM 8.801,10
33000KM 9.681,21
36000KM 10.561,32
39000KM 11.441,43
42000KM 12.321,54
45000KM 13.201,65

KM 938,78

KM 0,313 Each (On a Reel of 3000) (bez PDV-a)

KM 1.098,37

KM 0,366 Each (On a Reel of 3000) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 IRLML6344TRPBF
Informacije o stanju skladišta trenutno nisu dostupne.

3000

Dostupno u više komada 3000
3000KM 938,78
6000KM 1.877,57
9000KM 2.640,33
12000KM 3.520,44
15000KM 4.400,55
18000KM 5.280,66
21000KM 6.160,77
24000KM 7.040,88
27000KM 7.920,99
30000KM 8.801,10
33000KM 9.681,21
36000KM 10.561,32
39000KM 11.441,43
42000KM 12.321,54
45000KM 13.201,65

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

količinaJedinična cijenaPo kolut
3000 - 6000KM 0,313KM 938,78
9000+KM 0,293KM 880,11

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

6.8 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Height

1.02mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Philippines

Detalji o proizvodu

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više