IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
72 nC @ 10 V
Width
5.3mm
Minimum Operating Temperature
-55 °C
Height
21.46mm
Detalji o proizvodu
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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RSD 1.876
RSD 1.876 Each (bez PDV-a)
RSD 2.251
RSD 2.251 Each (s PDV-om)
Standard
1
RSD 1.876
RSD 1.876 Each (bez PDV-a)
RSD 2.251
RSD 2.251 Each (s PDV-om)
Standard
1
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Proverite ponovno kasnije.
| količina | Jedinična cena |
|---|---|
| 1 - 5 | RSD 1.876 |
| 6 - 14 | RSD 1.643 |
| 15+ | RSD 1.628 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
72 nC @ 10 V
Width
5.3mm
Minimum Operating Temperature
-55 °C
Height
21.46mm
Detalji o proizvodu
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda