IXYS HiperFET, Q-Class N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
800 V
Series
HiperFET, Q-Class
Package Type
TO-264AA
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.13mm
Transistor Material
Si
Length
19.96mm
Typical Gate Charge @ Vgs
170 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
26.16mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel Power MOSFET, IXYS HiperFET™ Q Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 1.007,00
€ 40,28 Each (In a Tube of 25) (bez PDV-a)
€ 1.178,19
€ 47,128 Each (In a Tube of 25) (s PDV-om)
25
€ 1.007,00
€ 40,28 Each (In a Tube of 25) (bez PDV-a)
€ 1.178,19
€ 47,128 Each (In a Tube of 25) (s PDV-om)
25
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Provjerite ponovno kasnije.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
800 V
Series
HiperFET, Q-Class
Package Type
TO-264AA
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.13mm
Transistor Material
Si
Length
19.96mm
Typical Gate Charge @ Vgs
170 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
26.16mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel Power MOSFET, IXYS HiperFET™ Q Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda