Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Series
BSN20BK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
0.49 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Detalji o proizvodu
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
RSD 15.676
RSD 26,127 komad (isporučivo u Reel) (bez PDV-a)
RSD 18.811
RSD 31,352 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
600
RSD 15.676
RSD 26,127 komad (isporučivo u Reel) (bez PDV-a)
RSD 18.811
RSD 31,352 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
600
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po kolut |
---|---|---|
600 - 1400 | RSD 26,127 | RSD 2.613 |
1500+ | RSD 23,514 | RSD 2.351 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Series
BSN20BK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
0.49 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Detalji o proizvodu