onsemi PowerTrench Dual P-Channel MOSFET, 6.9 A, 30 V, 8-Pin SOIC FDS4935BZ
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
6.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
29 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.5mm
Detalji o proizvodu
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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RSD 3.592
RSD 143,698 komad (isporučivo u Reel) (bez PDV-a)
RSD 4.311
RSD 172,438 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
25
RSD 3.592
RSD 143,698 komad (isporučivo u Reel) (bez PDV-a)
RSD 4.311
RSD 172,438 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
25
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
| količina | Jedinična cena | Po kolut |
|---|---|---|
| 25 - 95 | RSD 143,698 | RSD 718 |
| 100 - 245 | RSD 97,976 | RSD 490 |
| 250 - 495 | RSD 92,751 | RSD 464 |
| 500+ | RSD 88,832 | RSD 444 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
6.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
29 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.5mm
Detalji o proizvodu
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda