onsemi Dual N/P-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 NDC7001C

RS kataloški broj:: 761-4574robna marka: onsemiProizvođački broj:: NDC7001C
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

340 mA, 510 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4 Ω, 10 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

1.1 nC @ 10 V, 1.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Informacije o stanju skladišta trenutno nisu dostupne.

€ 5,40

€ 0,54 Each (In a Pack of 10) (bez PDV-a)

€ 6,32

€ 0,632 Each (In a Pack of 10) (s PDV-om)

onsemi Dual N/P-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 NDC7001C
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10€ 5,40
20€ 10,80
30€ 16,20
40€ 21,60
50€ 27,00
60€ 32,40
70€ 37,80
80€ 43,20
90€ 48,60
100€ 47,00
110€ 51,70
120€ 56,40
130€ 61,10
140€ 65,80
150€ 70,50

€ 5,40

€ 0,54 Each (In a Pack of 10) (bez PDV-a)

€ 6,32

€ 0,632 Each (In a Pack of 10) (s PDV-om)

onsemi Dual N/P-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 NDC7001C
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10€ 5,40
20€ 10,80
30€ 16,20
40€ 21,60
50€ 27,00
60€ 32,40
70€ 37,80
80€ 43,20
90€ 48,60
100€ 47,00
110€ 51,70
120€ 56,40
130€ 61,10
140€ 65,80
150€ 70,50

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

količinaJedinična cijenaPo pakovanje
10 - 90€ 0,54€ 5,40
100 - 240€ 0,47€ 4,70
250 - 490€ 0,42€ 4,20
500 - 990€ 0,39€ 3,90
1000+€ 0,37€ 3,70

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

340 mA, 510 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4 Ω, 10 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

1.1 nC @ 10 V, 1.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više