Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET II
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
4.6mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
KM 23,51
KM 11,754 Each (In a Pack of 2) (bez PDV-a)
KM 27,51
KM 13,752 Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 23,51
KM 11,754 Each (In a Pack of 2) (bez PDV-a)
KM 27,51
KM 13,752 Each (In a Pack of 2) (s PDV-om)
Standard
2
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET II
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
4.6mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.