Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
7mm
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V
Height
2.3mm
Zemlja podrijetla
Japan
KM 3.168,40
KM 1,584 Each (On a Reel of 2000) (bez PDV-a)
KM 3.707,03
KM 1,853 Each (On a Reel of 2000) (s PDV-om)
2000
KM 3.168,40
KM 1,584 Each (On a Reel of 2000) (bez PDV-a)
KM 3.707,03
KM 1,853 Each (On a Reel of 2000) (s PDV-om)
2000
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Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
7mm
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.2V
Height
2.3mm
Zemlja podrijetla
Japan