Tehnička dokumentacija
Tehnički podaci
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
27.8 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
11.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Automotive Standard
AEC-Q101
Height
1.07mm
Zemlja podrijetla
China
KM 3.344,42
KM 1,115 Each (On a Reel of 3000) (bez PDV-a)
KM 3.912,97
KM 1,305 Each (On a Reel of 3000) (s PDV-om)
3000
KM 3.344,42
KM 1,115 Each (On a Reel of 3000) (bez PDV-a)
KM 3.912,97
KM 1,305 Each (On a Reel of 3000) (s PDV-om)
3000
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Tehnička dokumentacija
Tehnički podaci
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
27.8 W
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
11.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Automotive Standard
AEC-Q101
Height
1.07mm
Zemlja podrijetla
China