Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.15mm
Transistor Material
Si
Height
1.07mm
Minimum Operating Temperature
-50 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
KM 28,95
KM 2,895 Each (In a Pack of 10) (bez PDV-a)
KM 33,87
KM 3,387 Each (In a Pack of 10) (s PDV-om)
Standard
10
KM 28,95
KM 2,895 Each (In a Pack of 10) (bez PDV-a)
KM 33,87
KM 3,387 Each (In a Pack of 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 90 | KM 2,895 | KM 28,95 |
100 - 240 | KM 2,347 | KM 23,47 |
250 - 490 | KM 1,897 | KM 18,97 |
500 - 990 | KM 1,741 | KM 17,41 |
1000+ | KM 1,545 | KM 15,45 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.15mm
Transistor Material
Si
Height
1.07mm
Minimum Operating Temperature
-50 °C
Zemlja podrijetla
China
Detalji o proizvodu