Wolfspeed SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK C2M1000170J
Tehnička dokumentacija
Tehnički podaci
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Width
10.99mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
Zemlja podrijetla
China
Detalji o proizvodu
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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RSD 3.323
RSD 1.661,676 komadno (u pakovanju od 2) (bez PDV-a)
RSD 3.988
RSD 1.994,011 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
RSD 3.323
RSD 1.661,676 komadno (u pakovanju od 2) (bez PDV-a)
RSD 3.988
RSD 1.994,011 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
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Proverite ponovno kasnije.
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 2 - 8 | RSD 1.661,676 | RSD 3.323 |
| 10+ | RSD 1.581,989 | RSD 3.164 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Width
10.99mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.8V
Zemlja podrijetla
China
Detalji o proizvodu
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda