Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOD-123
Maximum Continuous Forward Current
500mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
430mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
5.5A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
RSD 1.306
RSD 13,063 komad ( isporučivo na traci) (bez PDV-a)
RSD 1.568
RSD 15,676 komad ( isporučivo na traci) (s PDV-om)
Standard
100
RSD 1.306
RSD 13,063 komad ( isporučivo na traci) (bez PDV-a)
RSD 1.568
RSD 15,676 komad ( isporučivo na traci) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
100
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cena | Po traka |
---|---|---|
100 - 500 | RSD 13,063 | RSD 1.306 |
600 - 1400 | RSD 11,757 | RSD 1.176 |
1500+ | RSD 10,451 | RSD 1.045 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOD-123
Maximum Continuous Forward Current
500mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
430mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
5.5A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.