STMicroelectronics MDmesh M5 N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 STP18N55M5
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
550 V
Package Type
TO-220
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.75mm
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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KM 286,52
KM 5,73 Each (In a Tube of 50) (bez PDV-a)
KM 335,23
KM 6,704 Each (In a Tube of 50) (s PDV-om)
50
KM 286,52
KM 5,73 Each (In a Tube of 50) (bez PDV-a)
KM 335,23
KM 6,704 Each (In a Tube of 50) (s PDV-om)
50
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
550 V
Package Type
TO-220
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.75mm
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda