Infineon SRAM, CY62128EV30LL-45ZAXI- 1Mbit
Tehnička dokumentacija
Tehnički podaci
Memory Size
1Mbit
Organisation
128K x 8 bit
Number of Words
128K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
STSOP
Pin Count
32
Dimensions
11.9 x 8.1 x 1.05mm
Maximum Operating Supply Voltage
3.6 V
Height
1.05mm
Maximum Operating Temperature
+85 °C
Length
11.9mm
Width
8.1mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Detalji o proizvodu
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
Standard
5
P.O.A.
Standard
5
Tehnička dokumentacija
Tehnički podaci
Memory Size
1Mbit
Organisation
128K x 8 bit
Number of Words
128K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
STSOP
Pin Count
32
Dimensions
11.9 x 8.1 x 1.05mm
Maximum Operating Supply Voltage
3.6 V
Height
1.05mm
Maximum Operating Temperature
+85 °C
Length
11.9mm
Width
8.1mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Detalji o proizvodu
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.