Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Series
DMN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Width
9.01mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
48 nC @ 10 V
Length
10.66mm
Forward Diode Voltage
1.2V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 378,841
komad (u Tubi od 50) (bez PDV-a)
RSD 454,609
komad (u Tubi od 50) (s PDV-om)
50
RSD 378,841
komad (u Tubi od 50) (bez PDV-a)
RSD 454,609
komad (u Tubi od 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cena | Po cev |
---|---|---|
50 - 50 | RSD 378,841 | RSD 18.942 |
100+ | RSD 359,246 | RSD 17.962 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Series
DMN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Width
9.01mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
48 nC @ 10 V
Length
10.66mm
Forward Diode Voltage
1.2V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Automotive Standard
AEC-Q101
Detalji o proizvodu