Microchip P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 VP2106N3-G
Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
P
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
4.06mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.08mm
Height
5.33mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Detalji o proizvodu
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
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RSD 2.090
RSD 83,606 komadno (u pakovanju od 25) (bez PDV-a)
RSD 2.508
RSD 100,327 komadno (u pakovanju od 25) (s PDV-om)
Standard
25
RSD 2.090
RSD 83,606 komadno (u pakovanju od 25) (bez PDV-a)
RSD 2.508
RSD 100,327 komadno (u pakovanju od 25) (s PDV-om)
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 25 - 75 | RSD 83,606 | RSD 2.090 |
| 100+ | RSD 75,768 | RSD 1.894 |
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PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
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- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
P
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
4.06mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.08mm
Height
5.33mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Detalji o proizvodu
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda