Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
220 mA, 400 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.8 Ω, 7.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Zemlja podrijetla
Hong Kong
Detalji o proizvodu
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
Standard
50
P.O.A.
Standard
50
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
220 mA, 400 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.8 Ω, 7.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Zemlja podrijetla
Hong Kong
Detalji o proizvodu