Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,44
Each (In a Pack of 25) (bez PDV-a)
€ 0,515
Each (In a Pack of 25) (s PDV-om)
Standard
25
€ 0,44
Each (In a Pack of 25) (bez PDV-a)
€ 0,515
Each (In a Pack of 25) (s PDV-om)
Standard
25
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
25 - 100 | € 0,44 | € 11,00 |
125 - 475 | € 0,21 | € 5,25 |
500 - 1225 | € 0,20 | € 5,00 |
1250+ | € 0,18 | € 4,50 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu