Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Detalji o proizvodu
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 66,624
komad ( isporučivo na traci) (bez PDV-a)
RSD 79,949
komad ( isporučivo na traci) (s PDV-om)
25
RSD 66,624
komad ( isporučivo na traci) (bez PDV-a)
RSD 79,949
komad ( isporučivo na traci) (s PDV-om)
25
Kupujte na veliko
količina | Jedinična cena | Po traka |
---|---|---|
25 - 25 | RSD 66,624 | RSD 1.666 |
50 - 100 | RSD 47,029 | RSD 1.176 |
125 - 225 | RSD 32,659 | RSD 816 |
250+ | RSD 30,046 | RSD 751 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Detalji o proizvodu