Tehnička dokumentacija
Tehnički podaci
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Screw Mount
Maximum Operating Temperature
+200 °C
Maximum Drain Source Voltage
65 V
Maximum Gate Threshold Voltage
7V
Maximum Continuous Drain Current
2 A
Series
TetraFET
Maximum Power Dissipation
29 W
Width
6.35mm
Height
5.08mm
Length
18.92mm
Package Type
DP
Brand
SemelabZemlja podrijetla
United Kingdom
Detalji o proizvodu
Fully Moulded Subminiature GB Series
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
25
P.O.A.
25
Tehnička dokumentacija
Tehnički podaci
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Screw Mount
Maximum Operating Temperature
+200 °C
Maximum Drain Source Voltage
65 V
Maximum Gate Threshold Voltage
7V
Maximum Continuous Drain Current
2 A
Series
TetraFET
Maximum Power Dissipation
29 W
Width
6.35mm
Height
5.08mm
Length
18.92mm
Package Type
DP
Brand
SemelabZemlja podrijetla
United Kingdom
Detalji o proizvodu