STMicroelectronics MJE3055T NPN Transistor, 10 A, 60 V, 3-Pin TO-220

Name: STMicroelectronics MJE3055T NPN Transistor, 10 A, 60 V, 3-Pin TO-220
Brand: STMicroelectronics
SKU: 1686073
Availability: LimitedAvailability

RS kataloški broj:: 168-6073robna marka: STMicroelectronicsProizvođački broj:: MJE3055T

Prikaži sve u Bipolar Transistors

Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Transistor Type

NPN

Maximum DC Collector Current

10 A

Maximum Collector Emitter Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

75 W

Minimum DC Current Gain

Transistor Configuration

Single

Maximum Collector Base Voltage

70 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

2 MHz

Pin Count

Number of Elements per Chip

Dimensions

9.15 x 10.4 x 4.6mm

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

NPN Power Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

€ 1,25

Each (In a Tube of 50) (bez PDV-a)

€ 1,462

Each (In a Tube of 50) (s PDV-om)

STMicroelectronics MJE3055T NPN Transistor, 10 A, 60 V, 3-Pin TO-220

€ 1,25

Each (In a Tube of 50) (bez PDV-a)

€ 1,462

Each (In a Tube of 50) (s PDV-om)

STMicroelectronics MJE3055T NPN Transistor, 10 A, 60 V, 3-Pin TO-220

Informacije o stanju skladišta trenutno nisu dostupne.

Kupujte na veliko

količina	Jedinična cijena	Po cijev
50 - 50	€ 1,25	€ 62,50
100 - 450	€ 0,89	€ 44,50
500 - 950	€ 0,80	€ 40,00
1000 - 1950	€ 0,71	€ 35,50
2000+	€ 0,69	€ 34,50

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Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Transistor Type

NPN

Maximum DC Collector Current

10 A

Maximum Collector Emitter Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

75 W

Minimum DC Current Gain

Transistor Configuration

Single

Maximum Collector Base Voltage

70 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

2 MHz

Pin Count

Number of Elements per Chip

Dimensions

9.15 x 10.4 x 4.6mm

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

NPN Power Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.