N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220FP STMicroelectronics STP80NF10FP
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Series
STripFET II
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
135 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.3mm
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
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Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 300,64
KM 6,013 Each (In a Tube of 50) (bez PDV-a)
KM 351,75
KM 7,035 Each (In a Tube of 50) (s PDV-om)
50
KM 300,64
KM 6,013 Each (In a Tube of 50) (bez PDV-a)
KM 351,75
KM 7,035 Each (In a Tube of 50) (s PDV-om)
50
Kupujte na veliko
| količina | Jedinična cijena | Po cijev |
|---|---|---|
| 50 - 50 | KM 6,013 | KM 300,64 |
| 100 - 450 | KM 5,213 | KM 260,63 |
| 500 - 950 | KM 4,823 | KM 241,16 |
| 1000 - 4950 | KM 4,65 | KM 232,51 |
| 5000+ | KM 4,088 | KM 204,39 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Series
STripFET II
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
135 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.3mm
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda