Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Series
STripFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.045 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.6V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Width
4mm
Number of Elements per Chip
1
Height
1.25mm
Minimum Operating Temperature
-55 °C
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,60
komadno (u namotaju od 2500) (bez PDV-a)
€ 0,702
komadno (u namotaju od 2500) (s PDV-om)
2500
€ 0,60
komadno (u namotaju od 2500) (bez PDV-a)
€ 0,702
komadno (u namotaju od 2500) (s PDV-om)
2500
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Series
STripFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.045 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.6V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Width
4mm
Number of Elements per Chip
1
Height
1.25mm
Minimum Operating Temperature
-55 °C