Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30.8 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
4.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
15.1mm
Zemlja podrijetla
Japan
Detalji o proizvodu
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 10,48
€ 5,24 Each (In a Pack of 2) (bez PDV-a)
€ 12,26
€ 6,131 Each (In a Pack of 2) (s PDV-om)
2
€ 10,48
€ 5,24 Each (In a Pack of 2) (bez PDV-a)
€ 12,26
€ 6,131 Each (In a Pack of 2) (s PDV-om)
2
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 8 | € 5,24 | € 10,48 |
10+ | € 3,89 | € 7,78 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30.8 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
4.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
15.1mm
Zemlja podrijetla
Japan
Detalji o proizvodu