N-channel MOSFET,IRFR110 4.3A 100V 75pcs
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
D-PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Height
2.39mm
Width
6.22mm
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Provjerite ponovno kasnije.
P.O.A.
1
P.O.A.
1
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
D-PAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Height
2.39mm
Width
6.22mm