Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Zemlja podrijetla
China
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
KM 261,59
KM 10,464 Each (In a Tube of 25) (bez PDV-a)
KM 306,06
KM 12,243 Each (In a Tube of 25) (s PDV-om)
25
KM 261,59
KM 10,464 Each (In a Tube of 25) (bez PDV-a)
KM 306,06
KM 12,243 Each (In a Tube of 25) (s PDV-om)
25
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po cijev |
---|---|---|
25 - 25 | KM 10,464 | KM 261,59 |
50 - 100 | KM 10,092 | KM 252,30 |
125+ | KM 9,407 | KM 235,18 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Zemlja podrijetla
China
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.