Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK IPB081N06L3GATMA1

RS kataloški broj:: 826-9525Pbrend: InfineonProizvođački broj:: IPB081N06L3GATMA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

22 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 18.942

RSD 189,421 komad (isporučivo u Reel) (bez PDV-a)

RSD 22.730

RSD 227,305 komad (isporučivo u Reel) (s PDV-om)

Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK IPB081N06L3GATMA1
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 25.

Proizvodnja -

Dostupno u više komada 25.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

100

Dostupno u više komada 25
100RSD 18.942
125RSD 23.678
150RSD 28.413
175RSD 33.149
200RSD 37.884
225RSD 42.620
250RSD 46.702
275RSD 51.372
300RSD 56.042
325RSD 60.713
350RSD 65.383
375RSD 70.053
400RSD 74.723
425RSD 79.393
450RSD 84.064

RSD 18.942

RSD 189,421 komad (isporučivo u Reel) (bez PDV-a)

RSD 22.730

RSD 227,305 komad (isporučivo u Reel) (s PDV-om)

Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK IPB081N06L3GATMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 25.

Proizvodnja -

Dostupno u više komada 25.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

100

Dostupno u više komada 25
100RSD 18.942
125RSD 23.678
150RSD 28.413
175RSD 33.149
200RSD 37.884
225RSD 42.620
250RSD 46.702
275RSD 51.372
300RSD 56.042
325RSD 60.713
350RSD 65.383
375RSD 70.053
400RSD 74.723
425RSD 79.393
450RSD 84.064

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo kolut
100 - 225RSD 189,421RSD 4.736
250 - 475RSD 186,808RSD 4.670
500 - 975RSD 180,276RSD 4.507
1000+RSD 150,23RSD 3.756

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

22 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više