Infineon SIPMOS® P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK SPD30P06PGBTMA1

RS kataloški broj:: 898-6864brend: InfineonProizvođački broj:: SPD30P06P G
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

6.22mm

Transistor Material

Si

Forward Diode Voltage

1.7V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 1.751

RSD 175,051 komadno (u pakovanju od 10) (bez PDV-a)

RSD 2.101

RSD 210,061 komadno (u pakovanju od 10) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK SPD30P06PGBTMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10RSD 1.751
20RSD 3.501
30RSD 5.252
40RSD 7.002
50RSD 8.753
60RSD 10.503
70RSD 12.254
80RSD 14.004
90RSD 15.755
100RSD 17.505
110RSD 19.256
120RSD 21.006
130RSD 22.757
140RSD 24.507
150RSD 26.258

RSD 1.751

RSD 175,051 komadno (u pakovanju od 10) (bez PDV-a)

RSD 2.101

RSD 210,061 komadno (u pakovanju od 10) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK SPD30P06PGBTMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10RSD 1.751
20RSD 3.501
30RSD 5.252
40RSD 7.002
50RSD 8.753
60RSD 10.503
70RSD 12.254
80RSD 14.004
90RSD 15.755
100RSD 17.505
110RSD 19.256
120RSD 21.006
130RSD 22.757
140RSD 24.507
150RSD 26.258

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

6.22mm

Transistor Material

Si

Forward Diode Voltage

1.7V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više