Infineon CoolMOS™ C3 N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220 SPP11N80C3XKSA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ C3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
64 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Maximum Operating Temperature
+150 °C
Height
9.45mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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KM 7,63
KM 7,63 Each (bez PDV-a)
KM 8,93
KM 8,93 Each (s PDV-om)
Standard
1
KM 7,63
KM 7,63 Each (bez PDV-a)
KM 8,93
KM 8,93 Each (s PDV-om)
Standard
1
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
| količina | Jedinična cijena |
|---|---|
| 1 - 9 | KM 7,63 |
| 10 - 49 | KM 7,35 |
| 50 - 99 | KM 7,28 |
| 100+ | KM 7,06 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ C3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
64 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Maximum Operating Temperature
+150 °C
Height
9.45mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda