Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
76 nC @ 10 V
Width
9.65mm
Height
4.83mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
RSD 20.902
RSD 418,032 komad (isporučivo u Reel) (bez PDV-a)
RSD 25.082
RSD 501,638 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
RSD 20.902
RSD 418,032 komad (isporučivo u Reel) (bez PDV-a)
RSD 25.082
RSD 501,638 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po kolut |
---|---|---|
50 - 120 | RSD 418,032 | RSD 2.090 |
125 - 245 | RSD 404,968 | RSD 2.025 |
250 - 495 | RSD 391,905 | RSD 1.960 |
500+ | RSD 326,587 | RSD 1.633 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
76 nC @ 10 V
Width
9.65mm
Height
4.83mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu