Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,087
Each (Supplied on a Reel) (bez PDV-a)
KM 0,102
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
200
KM 0,087
Each (Supplied on a Reel) (bez PDV-a)
KM 0,102
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
200
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu