Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
BSC035N10NS5
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 5,515
Each (On a Reel of 5000) (bez PDV-a)
KM 6,453
Each (On a Reel of 5000) (s PDV-om)
5000
KM 5,515
Each (On a Reel of 5000) (bez PDV-a)
KM 6,453
Each (On a Reel of 5000) (s PDV-om)
5000
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
BSC035N10NS5
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V