Tehnička dokumentacija
Tehnički podaci
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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KM 8,327
Each (In a Tube of 30) (bez PDV-a)
KM 9,743
Each (In a Tube of 30) (s PDV-om)
30
KM 8,327
Each (In a Tube of 30) (bez PDV-a)
KM 9,743
Each (In a Tube of 30) (s PDV-om)
30
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
30 - 30 | KM 8,327 | KM 249,81 |
60 - 120 | KM 7,786 | KM 233,59 |
150 - 270 | KM 7,678 | KM 230,35 |
300+ | KM 7,354 | KM 220,62 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.